2SK2369 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A)
2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
15.7 MAX
4
φ 3.0 ± 0.2
4.7 MAX.
1.5
1 23
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SAK2369/2370) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (pulse)*
ID(pulse) ±80
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
140
W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
20
A
Single Avalanche Energy**
EAS
285 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2.2 ± 0.2
5.45
1.0 ± 0.2
0.6 ± 0.1
5.45
2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
©
1995