2SK2363 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2363/2SK2364
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A)
2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1600 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2363/2SK2364) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±8.0
A
Drain Current (pulse)*
ID(pulse) ±32
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35
W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
8.0
A
Single Avalanche Energy**
EAS
320 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. TC-2504A
(O. D. No. TC-8063A)
Date Published May 1995 P
Printed in Japan
©
1994