2SK2361 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A)
2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse) ±40
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
100
W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
142 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
©
1995