2SK2359 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2359/2SK2360
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
• Low On-Resistance
2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A)
2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SK2359/2SK2360) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75
W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
7.0
A
Single Avalanche Energy**
EAS
17
mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54 _{1. Gate}
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
123
(0.5(R0).8R)
0.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
Document No. TC-2501
(O. D. No. TC-8060)
Date Published February 1995 P
Printed in Japan
©
1995