2SK2355 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
• Low On-Resistance
2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2355/2356) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
50
W
Total Power Dissipation (Ta = 25 ˚C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS
5.0
A
Single Avalanche Energy**
EAS
17.4 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
4.8 MAX.
3.6 ±0.2
10.0
1.3 ±0.2
4
1 23
1.3 ±0.2
0.5 ±0.2
0.75 ±0.1
2.54
2.8 ±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
4
1.0 ±0.3
1.4 ±0.2
(2.54) (2.54)
123
(0.5(R0).8R)
0.5 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (TO-220 SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
The information in this document is subject to change without notice.
Document No. D11391EJ3V0DS00 (3rd edition)
(Previous No. TC-2500)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994