2SK2275 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• ^{Low On-state Resistance}
RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A)
• ^{LOW Ciss Ciss = 1 000 pF TYP.}
• ^{High Avalanche Capability Ratings}
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±3.5
A
Drain Current (pulse)
ID (pulse)* ±14
A
Total Power Dissipation (TC = 25 °C) PT1
35
W
Total Power Dissipation (Ta = 25 °C) PT2
2.0
W
Storage Temperature
Tstg –55 to +150 °C
Channel Temperature
Tch
150
°C
Single Avalanche Current
IAS**
3.5
A
Single Avalanche Energy
EAS**
22
mJ
*PW ≤ 10 µs, Duty Cycle ≤ 1%
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
123
0.7 ± 0.1
2.54 TYP.
1.3 ± 0.2 0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
2.5 ± 0.1
123
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Gate (G)
Body diode
Source (S)
Document No. TC-2510
(O.D. No. TC–8069)
Date Published February 1995 P
Printed in Japan
©
1995