2SK2159 Datasheet, PDF (1/6 Pages) NEC – N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2159 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2159 is suitable for driving actuators of
low-voltage portable systems such as headphone stereo sets
and camcorders.
FEATURES
• Capable of drive gate with 1.5 V
• Small RDS(on)
RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A
PACKAGE DIMENSIONS
(in millimeters)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
2
1
3
0.42
± 0.06
0.42 ± 0.06
0.47
1.5 ±0.06
3.0
0.41^{+–00..0035}
EQUIVALENT CIRCUIT
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
3
Gate protection
diode
Internal diode
PIN CONNECTION
1
1. Source (S)
2. Drain (D)
Marking: NW
3. Gate (G)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms,
Duty Cycle ≤ 50 %
Mounted on 16 cm² × 0.7 mm ceramic substrate.
RATINGS
60
±14
±2.0
±4.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11235EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996