2SK2139 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2139
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35
W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
5.0
A
Single Avalanche Energy**
EAS
8.3
mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. TC-2512
(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan
©
1995