2SK2112 Datasheet, PDF (1/6 Pages) NEC – N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2112
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2112 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
• High switching speed
ton + toff < 100 ns
• Low parasitic capacitance
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
SDG
0.42
±0.06 _1.5
0.42
0.47 ±0.06
±0.06
3.0
0.41^{+–00..0053}
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NV
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms,
Duty cycle ≤ 50 %
16 cm² × 0.7 mm, ceramic substrate used
RATING
100
±20
±1.0
±2.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11232EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996