2SB1094 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER

DATA SHEET
SILICON POWER TRANSISTOR
2SB1094
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIER
FEATURES
• The 2SB1094 features ratings covering a wide range of
applications and is ideal for power supplies or a variety of drives
in audio and other equipment.:
VCEO ≥ −60 V, VEBO ≥ −7.0 V, IC(DC) ≤ −3.0 A
• Mold package that does not require an insulating board or
insulation bushing
• Complementary transistor with 2SD1585
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−3.0
A
Collector current (pulse)
IC(pulse)*
−5.0
A
Base current (DC)
IB(DC)
−0.6
A
Total power dissipation
PT (Tc = 25°C)
15
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16186EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928