TD3165 Datasheet, PDF (1/1 Pages) Microsemi Corporation – Solar Array Blocking Diode

2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: [phone]
TD3165
Solar Array Blocking Diode
Features
• Very Thin Construction
• Passivated mesa structure for very low leakage reverse currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, extremely low profile ceramic seal package
• Diode assembly has matched thermal coefficient of expansion
• Weldable / Solderable interconnects
200 Volts
10 Amps
Applications
• Designed for Solar Cell protection from plasma ESD
• Extreme Temperature Cycling environments
• Generically similar to product used on the International Space Station Alpha
Electrical Characteristics @ 25^oC
Junction Temperature Range -100 to +175 ^oC
SYMBOL CHARACTERISTIC
CONDITIONS
MAX UNITS
IR Reverse (Leakage) Current VR = 180 Vdc
0.5 uAmps
VF1 Forward Voltage
IF = 0.1 A pulse test pw=300ms, d/c<2% 710 mVolts
VF2 Forward Voltage
IF = 0.5 A pulse test pw=300ms, d/c<2% 775 mVolts
VF3 Forward Voltage
IF = 2.0 A pulse test pw=300ms, d/c<2% 850 mVolts
VF4 Forward Voltage
IF = 5.0 A pulse test pw=300ms, d/c<2% 875 mVolts
VF5 Forward Voltage
IF = 10 A pulse test pw=300ms, d/c<2% 950 mVolts
BVR Breakdown Voltage
IR = 100 uA
(min) 200 Volts
Mechanical Outline
Screening
• Temperature Cycling
• High Temperature Reverse Bias
• Power Burn-In
• Electrical Cycling
• Hermeticity
Qualification
• Humidity Testing
• Thermal Cycling (20,000 cycles)
• Bond Strength
• Electrical Cycling
• ESD
MSC1048.PDF
Updated: November 1998