2SK2731_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
■ Features
● VDS (V) = 30V
● ID = 0.2 A
● RDS(ON) ＜ 2.8Ω (VGS = 10V)
● RDS(ON) ＜ 4.5Ω (VGS = 4V)
N-Channel MOSFET
2SK2731
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Reverse Continuous Drain Current
Reverse Pulsded Drain Current
(Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10us, Duty Cycle ≤ 1%
■ Electrical Characteristics Ta = 25℃
Symbol
VDS
VGS
ID
IDM
IDR
IDMR
PD
TJ
Tstg
Rating
30
±20
0.2
0.8
0.2
0.8
200
150
-55 to 150
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cutt-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
■ Marking
Marking
KL
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
VDS=10V , ID=1mA
VGS=10V, ID=0.1A
VGS=4V, ID=0.1A
VDS=10V, ID=0.1A
VGS=0V, VDS=10V, f=1MHz
VGS=10V, VDS=15V,
ID=0.1A,RL=150Ω,RG=10Ω
Unit
V
A
mW
℃
Min Typ Max Unit
30
V
10 uA
±10 uA
1
2.5 V
2.8
Ω
4.5
100
mS
25
15
pF
10
15
20
ns
90
100
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