2SK2479 Datasheet, PDF (1/2 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
TransistIoCrs
MOS Field Effect Transistors
2SK2479
Features
Low On-state Resistance:RDS(on)=7.5 max.(VGS=10V,ID=2.0A)
Low Ciss Ciss=485pF TYP
High Avalanche Capability Ratings
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(pulse) *1
Total Power Dissipation TA=25
Total Power Dissipation TC=25
Channel Temperature
Storage temperature
Single Avalanche Current *2
Single Avalanche Energy *2
*1. PW 10ìs,Dduty cycle 1%.
*2.Starting Tch=25 ,RG=25Ù,VGS=20V 0
Symbol
Rating
Unit
VDSS
900
V
VGSS
30
V
ID(DS)
3
A
ID(pulse)
8
A
1.5
PT
W
70
Tch
150
Tstg
-55 to +150
IAS
3
A
EAS
5.4
mJ
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