2SK2329S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon N-Channel MOSFET

SMD Type
Silicon N-Channel MOSFET
2SK2329S
MOSFICET
Features
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source
Suitable for Switching regulator, DC-DC converter
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
30
10
10
40
20
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
VDSS ID=10mA,VGS=0
VGSS IG= 200 A,VGS=0
IDSS VDS=25V,VGS=0
IGSS VGS= 6.5V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=5A
VGS=4V,ID=5A
RDS(on)
VGS=2.5V,ID=5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
ton
tr
ID=5A,VGS(on)=4V,RL=2
toff
tf
Unit
V
V
A
A
W
Min Typ Max Unit
30
V
10
V
100
A
10
A
0.4
1.4 V
10 18
S
0.03 0.04
0.04 0.06
1250
pF
540
pF
120
pF
20
ns
145
ns
225
ns
125
ns
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