2SK2211_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK2211
MOSFET
■ Features
● VDS (V) = 30V
● ID = 1A
● RDS(ON) ＜ 0.75Ω (VGS = 4V)
● RDS(ON) ＜ 0.6Ω (VGS = 10V)
G
D
S
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
30
±20
1
2
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
VDSS ID=100μA, VGS=0V
Gate to Source voltage
VGSS IGS=100μA, VDS=0V
Zero Gate Voltage Drain Current
IDSS VDS=25V, VGS=0V
Gate-Body Leakage Current
IGSS VDS=0V, VGS=±15V
Gate threshold voltage
VGS(th) VDS=5V ID=1mA
Static Drain-Source On-Resistance
RDS(On)
VGS=4V, ID=0.5A
VGS=10V, ID=0.5A
Forward Transconductance
gFS
VDS=10V, ID=0.5 A
Input Capacitance
Ciss
Output Capacitance
Coss VGS=0V, VDS=10V, f=1MHz
Reverse Transfer Capacitance
Crss
Turn-On DelayTime
Turn-Off DelayTime
Turn-Off Fall Time
td(on)
td(off)
tf
VGS=10V, VDS=10V, ID=0.5A,
RL=10Ω
Unit
V
A
W
℃
Min Typ Max Unit
30
V
±20
10 uA
±10 uA
0.8
2
V
0.75
Ω
0.6
0.5
S
87
69
pF
23
12
60
ns
160
■ Marking
Marking
2M
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