2SK2159-HF Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK2159-HF
MOSFET
■ Features
● VDS (V) = 60V
● ID = 2 A
● RDS(ON) ＜ 0.3Ω (VGS = 4V)
● RDS(ON) ＜ 0.5Ω (VGS = 2.5V)
● Pb−Free Package May be Available.
G
Gate
protection
diode
The G−Suffix Denotes a Pb−Free Lead Finish
1.70 0.1
D
Internal
diode
0.42 0.1
0.46 0.1
S
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
60
±14
2
4
2
150
-55 to 150
Note.1: PW ≤ 10ms, Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cutt-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS= 60 V, VGS=0V
VDS=0V, VGS=±14V
VDS=10V , ID=1mA
VGS=4V, ID=1A
VGS=2.5V, ID=1A
VGS=1.5V, ID=0.1A
VDS=10V, ID=1A
VGS=0V, VDS=10V, f=1MHz
VGS(on)=3V, VDS=25V,
ID=1A,RL=25Ω,RG=10Ω
■ Marking
Marking
NW F
Unit
V
A
W
℃
Min Typ Max Unit
60
V
1 uA
±10 uA
0.5
1.1 V
0.3
0.5 Ω
0.7
0.4
S
319
109
pF
22
38
128
ns
237
130
www.kexin.com.cn ¹