2SK2158 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SMD Type
MOS Field Effect Transistor
2SK2158
MOSFET
Features
Capable of drive gate with 1.5 V
Because of high input impedance, there is no need to
consider driving current.
Bias resistance can be omitted, enabling reduction in total
number of parts.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
50
7.0
0.1
0.2
200
150
-55 to +150
Unit
V
V
A
A
mW
Symbol
Testconditons
Min Typ Max Unit
IDSS VDS=50V,VGS=0
1.0
A
IGSS VGS= 7.0V,VDS=0
3.0
A
VGS(off) VDS=3V,ID=10 A
0.5 0.7 1.1 V
Yfs VDS=3V,ID=10mA
20
ms
VGS=1.5V,ID=1.0mA
32 50
RDS(on) VGS=2.5V,ID=10mA
16 20
VGS=4.0V,ID=1.0mA
12 15
Ciss
6
pF
Coss VDS=3V,VGS=0,f=1MHZ
8
pF
Crss
1
pF
td(on)
9
ns
tr _{ID=20mA,VGS(on)=3V,RL=150 ,RG=10}
48
ns
td(off)
,VDD=3V
21
ns
tf
31
ns
Marking
Marking
G23
www.kexin.com.cn ¹