2SK2111_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK2111
MOSFET
■ Features
● VDS (V) = 60V
● ID = 1 A
● RDS(ON) ＜ 0.45Ω (VGS = 10V)
Drain (D)
● RDS(ON) ＜ 0.6Ω (VGS = 4V)
Gate (G)
Gate protection
diode
Internal diode
Source (S)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms, Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
60
±20
1
2
2
150
-55 to 150
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cutt-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
VDS=10V , ID=1mA
VGS=10V, ID=0.5A
VGS=4V, ID=0.5A
VDS=10V, ID=0.5A
VGS=0V, VDS=10V, f=1MHz
VGS(on)=10V, VDS=25V,
ID=0.5A,RL=50Ω,RG=10Ω
■ Marking
Marking
NU
Unit
V
A
W
℃
Min Typ Max Unit
60
V
1 uA
±10 uA
0.8
2
V
0.45
Ω
0.6
0.4
S
170
87
pF
32
2.8
2.3
ns
55
27
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