2SK2110 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SMD Type
MOS Field Effect Transistor
2SK2110
MOSFICET
Features
Low on-resistance
RDS(on)=1.5 MAX.@VGS=4.0V,ID=0.3A
High switching speed
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation *
Channel temperature
Storage temperature
* 16 cm²X0.7mm,ceramic substrate used
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
0.5
A
Idp
1.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=100V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(th) VDS=10V,ID=1mA
Yfs VDS=10V,ID=0.3A
VGS=4.0V,ID=0.3A
RDS(on)
VGS=10V,ID=0.3A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.3A,VGS(on)=10V,RL=83 ,RG=10
,VDD=25V
tf
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Min Typ Max Unit
1.0
A
10 nA
0.8 1.5 2.0 V
0.4
S
0.95 1.5
0.82 1.2
100
pF
38
pF
10
pF
2
ns
1.3
ns
38
ns
13
ns
Marking
Marking
NT
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