2SK2109_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK2109
MOSFET
■ Features
● VDS (V) = 60V
● ID = 0.5A
● RDS(ON) ＜ 1Ω (VGS = 4V)
● RDS(ON) ＜ 0.8Ω (VGS = 10V)
Drain (D)
1.70 0.1
0.42 0.1
0.46 0.1
Gate (G)
Gate protection
diode
Internal diode
Source (S)
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol
Rating
Unit
VDS
60
V
VGS
±20
ID
0.5
A
IDM
1
PD
2
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=60V, VGS=0V
IGSS VDS=0V, VGS=±20V
VGS(off) VDS=10V ID=1mA
RDS(On)
VGS=4V, ID=0.3A
VGS=10V, ID=0.3A
gFS
VDS=10V, ID=0.3A
Ciss
Coss VGS=0V, VDS=10V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=10V, VDS=25V, ID=0.3A,
RL=83Ω,RG=10Ω
tf
Min Typ Max Unit
60
V
1 uA
±10 uA
0.8
2
V
1
Ω
0.8
0.4
S
111
55
pF
19
2.2
1.5
ns
35
19
■ Marking
Marking
NS
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