2SK2094-Z Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
2SK2094-Z
■ Features
● VDS (V) = 60V
● ID = 2A
● RDS(ON) ＜ 0.35Ω (VGS = 10V)
● RDS(ON) ＜ 0.5Ω (VGS = 4V)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
±20
Continuous Drain Current
Pulsed Drain Current
(Note.1)
ID
2
A
IDM
8
Power Dissipation
PD
20
W
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Symbol
Test Conditions
VDSS ID=1 mA, VGS=0V
IDSS VDS=60V, VGS=0V
IGSS VDS=0V, VGS=±20V
VGS(th) VDS=10V ID=1mA
RDS(On)
VGS=10V, ID=1A
VGS=4V, ID=1A
gFS
VDS=10V, ID=1A
Ciss
Coss VGS=0V, VDS=10V, f=1MHz
Crss
td(on)
tr
td(off)
VGS=10V, VDS=30V, ID=1A,
RL=30Ω,RG=10Ω
tf
trr
IF= 2A,VGS=0, dI/dt= 100A/μs
Min Typ Max Unit
60
V
100 uA
±100 nA
1
2.5 V
0.35
Ω
0.5
1
S
400
150
pF
50
10
20
100
ns
40
100
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