2SK1960_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
2SK1960
MOSFICET
Features
Gate can be driven by 1.5V
Low ON resistance
RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A
RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
16
V
VGS
±7
Continuous Drain Current
ID
±3
A
Pulsed Drain Current PW ≤10ms,duty cycle ≤50%
IDM
±6
Power Dissipation
Junction Temperature
Storage Temperature Range
PD
2
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)1
RDS(On)2
RDS(On)3
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±7V
VDS=3V, ID=1mA
VGS=1.5V, ID=0.1A
VGS=2.5V, ID=1.5A
VGS=4V, ID=1.5A
VDS=3V, ID=1.5A
VGS=0V, VDS=3V, f=1MHz
ID=1.5A, VDS=3V, ,RGEN=10Ω,RL=2Ω
VGS(on) = 3 V
Min Typ Max Unit
16
V
1 μA
±3 nA
0.5 0.8 1.1 V
0.35 0.8
0.17 0.3 Ω
0.12 0.2
2
S
370
320
pF
115
70
200
ns
150
200
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