2SK1959_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1959
MOSFET
■ Features
● VDS (V) = 16V
● ID = 2A
● RDS(ON) ＜ 3.2Ω (VGS = 1.5V)
● RDS(ON) ＜ 0.5Ω (VGS = 4V)
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
■ Absolute Maximum Ratings Ta = 25℃
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VDS
16
V
VGS
±7
ID
2
A
IDM
4
PD
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
VDSS ID=250μA, VGS=0V
Zero Gate Voltage Drain Current
IDSS VDS=16V, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±7V
Gate Cut-off Voltage
VGS(off) VDS=3V ID=100uA
VGS=1.5V, ID=50mA
Static Drain-Source On-Resistance
RDS(On) VGS=2.5V, ID=500mA
VGS=4V, ID=1A
Forward Transconductance
gFS
VDS=3V, ID=1A
Input Capacitance
Ciss
Output Capacitance
Coss VGS=0V, VDS=3V, f=1MHz
Reverse Transfer Capacitance
Crss
Turn-On DelayTime
td(on)
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VGS(on)=3V, VDS=3V, ID=0.5A,
RL=6Ω,RG=10Ω
Turn-Off Fall Time
tf
Min Typ Max Unit
16
V
1 uA
±3 uA
0.5
1.1 V
3.2
0.6 Ω
0.5
1
S
160
150
pF
50
45
190
ns
180
210
■ Marking
Marking
NQ
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