2SK1959 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SMD Type
MOS Field Effect Transistor
2SK1959
Features
Gate can be driven by 1.5V
Low ON resistance
RDS(on)=3.2 MAX.@VGS=1.5V,ID=50mA
RDS(on)=0.5 MAX.@VGS=4.0V,ID=1A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFICET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
16
V
VGSS
7
V
ID
2.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to Source Cutoff Voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=16V,VGS=0
IGSS VGS= 7V,VDS=0
VGS(off) VDS=3V,ID=100 A
Yfs VDS=3V,ID=1.0A
VGS=1.5V,ID=50mA
RDS(on) VGS=2.5V,ID=0.5A
VGS=4.0V,ID=1.0A
Ciss
Coss VDS=3V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.5A,VGS(on)=3V,RL=6
,VDD=3V,RG=10
tf
Min Typ Max Unit
100
A
10
A
0.5 0.8 1.1 V
1.0
S
0.8 3.2
0.36 0.6
0.28 0.5
160
pF
150
pF
50
pF
45
ns
190
ns
180
ns
210
ns
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