2SB1120_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1120
Transistors
■ Features
● Very small size making it easy to provide high
highdensity, small-sized hybrid IC’s.
● Low collector-to-emitter saturation voltage
● Large current capacity : IC=–2.5A, ICP=–5A.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
(Note.1)
Symbol
Rating
Unit
VCBO
-20
VCEO
-10
V
VEBO
-7
IC
-2.5
A
ICP
-5
0.5
PC
W
1.3
TJ
150
℃
Tstg
-55 to 150
Note.1: Mounted on ceramic board (250mm² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -16V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-1.5 A, IB=-150mA
VBE(sat) IC=-1.5 A, IB=-150mA
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -3 A
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -10V, IC= -50mA
Min Typ Max Unit
-20
-10
V
-7
-0.1
uA
-0.1
-0.25 -0.45
V
-1.2
100
560
70
70
pF
250
MHz
■ Classification of hfe(1)
Type
2SB1120-E
Range
100-200
Marking
BC E*
2SB1120-F
160-320
BC F*
2SB1120-G
280-560
BC G*
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