2SB1119_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1119
Transistors
■ Features
● Very small size making it easy to provide high
highdensity, small-sized hybrid IC’s.
● Complementary to 2SD1619
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
(Note.1)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-25
-25
-5
-1
-2
0.5
1.3
150
-55 to 150
Note.1: Mounted on ceramic board (250mm ² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -20V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
VCE= -2V, IC= -50 mA
hFE
VCE= -2V, IC= -1 A
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -10V, IC= -50mA
Unit
V
A
W
℃
Min
-25
-25
-5
100
40
Typ Max
-0.1
-0.1
-0.15 -0.7
-0.85 -1.2
560
25
180
Unit
V
uA
V
pF
MHz
■ Classification of hfe(1)
Type
2SB1119-R
Range
100-200
Marking
BB R*
2SB1119-S
140-280
BB S*
2SB1119-T
200-400
BB T*
2SB1119-U
280-560
BB U*
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