K3519PQ-XH Datasheet, PDF (2/3 Pages) KEC(Korea Electronics) – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

K3519PQ-XH
Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-Drain Forward Voltage
V_(BR)DSS
V_(BR)GSS
I_DSS
I_GSS
V_th
R_DS(on)
R_g
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_SD
I_D = 250 A, V_GS = 0V
I_G = 100 , V_DS = 0V
V_DS = 24V, V_GS = 0V
V_GS = 12V, V_DS = 0V
V_DS=V_GS, I_D=250 A
V_GS = 4.5V, I_D = 1.0A
V_GS = 3.9V, I_D = 1.0A
V_GS = 3.5V, I_D = 1.0A
f=1MHz
V_DS = 10V, V_GS = 0V, f=1MHz
V_DD=10V, V_GS=3.9V, I_S=4.0A
V_GS = 0V, I_S = 1.0A
MIN
24
12
-
-
0.5
-
-
-
-
-
-
-
-
-
-
0.50
TYP
-
14
-
-
1.1
12.0
13.0
14.5
3.0
600
115
83
6.0
0.8
2.5
0.70
MAX
-
-
1.0
10
1.5
16.0
17.0
20.0
-
-
-
-
-
-
-
0.86
UNIT
V
V
V
m
m
m
k
pF
nC
V
2010. 4. 29
Revision No : 0
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