2N7002W Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002W
V_(BR)DSS
60 V
MOSFET (N-Channel)
R_DS(on)MAX
5Ω@10V
7Ω@5V
I_D
115mA
SOT-323
1. GATE
2. SOURCE
3. DRAIN
1
3
2
FEATURE
z High density cell design for low R_DS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
MARKING
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Power Dissipation
P_D
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_J
Storage Temperature
T_stg
Value
60
± 20
0.115
0.200
625
150
-50 ~+150
Unit
V
V
A
W
℃/W
℃
www.cj-elec.com
1
J,Sep,2016