NJW0281G Datasheet, PDF (1/2 Pages) ON Semiconductor – Complementary NPN-PNP Power Bipolar Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
NJW0281G
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min)
·Good Linearity of hFE
·Complement to Type NJW0302G
APPLICATIONS
·Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1.5
A
150
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc website：www.iscsemi.com
1
isc & iscsemi is registered trademark