2SK2611 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2611
DESCRIPTION
·Drain Current –ID=9A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·low on–resistance.
·High speed switching.
·No secondary breakdown.
·Suitable for switchingregulator, DC–DC control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
9
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.833 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
50
℃/W
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