2SK2071-01L Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2071-01L
FEATURES
·High speed switching
·Low On-Resistance
·Low driving power
·High voltage
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
DESCRIPTION
·Switching regulators
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
600
V
±30
V
2
A
6
A
20
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
6.25 ℃/W
isc website：www.iscsemi.com
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