2SK2050 Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2050
DESCRIPTION
·Drain Current –ID= 30A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor control
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
30
A
ID(puls)
Pulsed Drain Current
120
A
Ptot
Total Dissipation@TC=25℃
80
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.56 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
75
℃/W
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