2SK2038 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2038
DESCRIPTION
·Drain Current I_D= 5A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 800V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulators
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
800
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ TC=25℃
5
A
I_D(puls)
Pulsed drain current
15
A
P_tot
Total Dissipation@T_C=25℃
125
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
1
℃/W
R_{th j-a} Thermal Resistance, Junction to Ambient
50
℃/W
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