2SK1984-01M Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1984-01M
DESCRIPTION
·Drain Current –I_D= 3A@ T_C=25℃
·Drain Source Voltage-
: V_DSS=900V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulators
·UPS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
900
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ T_C=25℃
3
A
P_tot
Total Dissipation@T_C=25℃
40
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
3.125 ℃/W
Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.cn
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