2SK1968 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK1968
DESCRIPTION
·Drain Current –ID=12A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Suitable for switching regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
12
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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