2SK1937-01 Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK1937-01
DESCRIPTION
·Drain Current –ID= 15A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
15
A
IDM
Drain Current-Single Plused
60
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
35
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}