2SK1925 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Very High-Speed Switching Applications

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1925
DESCRIPTION
·Drain Current –I_D= 8A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Ultrahigh-speed switching
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
600
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ TC=25℃
8
A
P_tot
Total Dissipation@TC=25℃
120
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
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