2SA1080 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON PNP RING EMITTER TRANSISTOR(RET)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1080
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -40V(Min.)
·Good Linearity of h_FE
·Complement to Type 2SC2530
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
-40
V
V_CEO Collector-Emitter Voltage
-40
V
V_EBO Emitter-Base Voltage
-7
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
20
W
150
℃
-65~150 ℃
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