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| 2SK2736 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel DV-L MOS FET High Speed Power Switching | |||
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2SK2736
Silicon N Channel DVâL MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 20 m⦠typ. (VGS = 10V, ID = 15 A)
⢠4V gate drive devices.
⢠High speed switching
Outline
TOâ220CFM
ADE-208-544
1st. Edition
D
G
123
1. Gate
2. Drain
3. Source
S
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