2SK2735 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 20 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
G
S
12 ₃
12 ₃
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-543
1st. Edition