2SK2684 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel DV-L MOS FET High Speed Power Switching

2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 20 mΩ typ. (V_GS = 10V, I_D = 15 A)
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
4
4
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
ADE-208-542
1st. Edition