2SK2595 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET UHF Power Amplifier

2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
1st. Edition
This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.