2SK2586 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2586
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• R_DS(on) = 7 m typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO-3P
ADE-208-358 C
4th. Edition
D
G
1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source