2SK2569 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2569
Silicon N-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance.
• R_DS(on) = 2.6 max. (at V _GS = 4 V, I_D = 100mA)
• 2.5V gate drive device.
• Small package (MPAK).
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
ADE-208-384
1st. Edition