2SK2553 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
Application
High speed power switching
Features
• Low on-resistance
• R_DS(on) = 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-357H (Z)
9th. Edition
February 1999