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2SK2529 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK2529
Silicon N-Channel MOS FET
Application
High speed power switching
Features
⢠Low on-resistance
⢠RDS(on) = 7 m⦠typ.
⢠High speed switching
⢠4 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
ADE-208-356F
7th. Edition
D
12 3
1. Gate
G
2. Drain
3. Source
S
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