2SK2424 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – High speed power switching

2SK2424
Silicon N Channel MOS FET
Application
High speed power switching
TO–220CFM
Features
• Low on–resistance
• High speed switching
2
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC – DC
1
converter
3
12 ₃
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V_DSS
450
V
———————————————————————————————————————————
Gate to source voltage
V_GSS
±30
V
———————————————————————————————————————————
Drain current
I_D
8
A
———————————————————————————————————————————
Drain peak current
I_D(pulse)*
32
A
———————————————————————————————————————————
Body–drain diode reverse drain current
I_DR
8
A
———————————————————————————————————————————
Channel dissipation
Pch**
35
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C