2SK2390 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2390
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
• Avalanche ratings
Outline
TO-220CFM
November 1996
D
12 ₃
1. Gate
G
2. Drain
3. Source
S