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2SK2329 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
⢠Low on-resistance
⢠High speed switching
⢠Low drive current
⢠2.5 V gate drive device can be driven from 3 V source
⢠Suitable for Switching regulator, DC-DC converter
Outline
DPAK-2
4
4
1
23
D
12 3
1. Gate
G
2. Drain
3. Source
4. Drain
S
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