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2SK2315 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK2315
Silicon N-Channel MOS FET
Application
High speed power switching
Features
⢠Low on-resistance
⢠High speed switching
⢠Low drive current
⢠2.5 V gate drive device can be driven from 3 V source.
⢠Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
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